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US 7,733,626 B2Granted
Passive device structure
AssigneeIntel Corporation
InventorsCengiz A. Palanduz, Yongki Min
Life of this patent
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AssigneeIntel Corporation
InventorsCengiz A. Palanduz, Yongki Min
Estimating the term…
A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material; and sintering the ceramic material. A method including forming a ceramic material directly on a sheet of a first conductive material; forming a second conductive material on the ceramic material so that the ceramic material is disposed between the first conductive material and the second conductive material; thermal processing at a temperature sufficient to sinter the ceramic material and form a film of the second conductive material; and coating an exposed surface of at least one of the first conduct material and the second conductive material with a different conductive material. An apparatus including first and second electrodes; and a ceramic material between the first electrode and the second electrode, wherein the ceramic material is sintered directly on one of the first and second electrode.
An apparatus comprising:
An apparatus comprising:
An apparatus comprising:
A capacitor structure comprising:
Dependencies are inferred from the claim text.