Method for manufacturing a magnetoresistive-effect device
AssigneePanasonic Corporation
InventorAkifumi Aono
Life of this patent
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Abstract
A magnetic disk apparatus having a highly sensitive reproducing head and a method for manufacturing the magnetic disk apparatus are disclosed. A spin-value-type multilayer film composed of an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic layer and a free magnetic layer is used as a magnoresistive-effect device for the reproducing head. An antiferromagnetic reaction layer is formed between the antiferromagnetic layer and the ferromagnetic layer. The antiferromagnetic reaction layer is formed of a metallic compound containing oxygen.
Claims7
A method of manufacturing a magnetoresistive-effect device, comprising:
- conveying a substrate into a first chamber and forming an antiferromagnetic layer in a vacuum atmosphere in the first chamber;
- conveying the substrate into a second chamber and performing vacuum discharge in the second chamber at a degree of vacuum lower than that in the first chamber to form an antiferromagnetic reaction layer on a surface of the antiferromagnetic layer;
- removing the substrate from the second chamber and, in another chamber, forming a ferromagnetic layer on the antiferromagnetic reaction layer;
- and
- forming a magnetoresistive-effect film in which the antiferromagnetic reaction layer is between the antiferromagnetic layer and the ferromagnetic layer.
A method of manufacturing a magnetoresistive-effect device, the method comprising:
- conveying a substrate into a first chamber and forming an antiferromagnetic layer in a vacuum atmosphere in the first chamber;
- conveying the substrate into a second chamber and performing a surface treatment using a gas containing 1 ppm or higher of H2O or O2 to form an antiferromagnetic reaction layer;
- removing the substrate from the second chamber and, in another chamber, forming a ferromagnetic layer on the antiferromagnetic reaction layer;
- and
- forming a magnetoresistive-effect film in which the antiferromagnetic reaction layer is provided between the antiferromagnetic layer and the ferromagnetic layer.
A method of manufacturing a magnetoresistive-effect device, the method comprising:
- conveying a substrate into a first chamber and forming an antiferromagnetic layer in a vacuum atmosphere in the first chamber;
- conveying the substrate into a second chamber and exposing the substrate to an atmosphere having one of an H2O concentration and an O2 concentration higher than that in the first chamber to form an antiferromagnetic reaction layer;
- removing the substrate from the second chamber and in another chamber forming a ferromagnetic layer on the antiferromagnetic reaction layer;
- and
- forming a magnetoresistive-effect film in which the antiferromagnetic reaction layer is between the antiferromagnetic layer and the ferromagnetic layer.
Dependencies are inferred from the claim text.