Semitransmissive liquid crystal display device and manufacturing method thereof

A semi-transmissive liquid crystal display device comprising a liquid crystal disposed between a TFT array substrate having, in one pixel, a light transmissive pixel electrode that is disposed to transmit light to the liquid crystal and a light reflective pixel electrode that is disposed to reflect light to the liquid crystal and an opposite substrate having an opposite transparent electrode, wherein the TFT array substrate comprises:

• a gate wiring that is made of a first conductive film formed on a transparent insulating substrate and includes a gate electrode;
• a first insulating film formed on the first conductive film;
• a semiconductor layer formed on the first insulating film and opposed to the gate electrode;
• a source wiring made of a second conductive film that is formed on the first insulating film and intersects with the gate wiring and has a source electrode disposed on the semiconductor layer;
• a drain electrode made of the second conductive film and disposed on the semiconductor layer;
• a thin film transistor that is formed of the gate electrode, the semiconductor layer, the source electrode, and the drain electrode;
• and
• a second insulating film formed on the first insulating film, the source wiring, and the thin film transistor,
• wherein the reflective pixel electrode is formed from the second conductive film and extends from the drain electrode,
• the second insulating film has an opening on the reflective pixel electrode, at a far side from the drain electrode, the opening overlapping at least a portion of the reflective pixel electrode,
• the transmissive pixel electrode is disposed on the transparent insulating substrate so as to be aligned with the reflective pixel electrode and to be positioned at a farther side than the reflective pixel electrode from the drain electrode,
• the transmissive pixel electrode is only electrically connected with the overlapped portion of the reflective pixel electrode through the opening of the second insulating film,
• almost all of a surface of the reflective pixel electrode, except for the portion of the reflective pixel electrode is covered with a covering portion of the second insulating film,
• the reflective pixel electrode is formed into a two-layered structure in which a first layer is formed of a selected one from a group consisting of Cr, Mo, Ti, Ta and an alloy mainly made of at least one of these materials and a second layer is formed of a selected one from a group consisting of Al, Ag and an alloy mainly made of at least one of these materials, and
• on the overlapped portion of the reflective pixel electrode, the second layer is partially removed, and the electrical connection therebetween is established through the first layer of the reflective pixel electrode.