Optical image receiving device having wide dynamic range

A CMOS active pixel comprising:

• a photodiode which generates signal charges according to received photons;
• a capacitance node which receives the signal charges generated from the photodiode;
• a reset transistor which resets the capacitance node in response to a reset control signal, wherein the reset control signal is continuously activated for a first predetermined time period during which the reset transistor is activated to form an initialization state in which electronic potential energy in area of the photodiode becomes a ground state;
• a floating diffusion node which gates a driving transistor, the driving transistor being controlled by a voltage level of the floating diffusion node;
• a select transistor which transmits a voltage transmitted by the driving transistor to a corresponding data line in response to a row selection signal;
• and
• a capacitor which has one port commonly connected to the capacitance node and the floating diffusion node and the other port electrically connected to a capacitor control signal, the capacitor being activated in response to the capacitor control signal to form a capacitance;
• wherein the capacitor control signal becomes in an inactivation state during the first predetermined time period so that the capacitor is activated to form the capacitance during a second predetermined time period between a start time of the first predetermined time period and a start time of the inactivation state of the capacitor control signal;
• and
• wherein electronic potentials in regions of the capacitor and the floating diffusion node are higher than electronic potential in region of the photodiode in the initialization state, and a depletion region in the region of the photodiode does not increase.

A CMOS active pixel comprising:

• a photodiode which generates signal charges according to received photons;
• a transmission transistor which is connected between the photodiode and a capacitance node to provide the signal charges to the capacitance node in response to activation of a transmission control signal;
• the capacitance node which receives the signal charges transmitted by the transmission transistor;
• a reset transistor which resets the capacitance node in response to a reset control signal, wherein the reset control signal is continuously activated for a first predetermined time period during which the reset transistor is activated to form an initialization state in which electronic potential energy in area of the photodiode becomes a ground state;
• a floating diffusion node which gates a driving transistor and electrically connected to the capacitance node;
• the driving transistor which is controlled by a voltage level of the floating diffusion node;
• and
• a select transistor which transmits a voltage transmitted by the driving transistor to a corresponding data line in response to a row selection signal,
• wherein the transmission control signal becomes in an inactivation state during the first predetermined time period so that the transmission transistor is activated to provide the signal charges during a second predetermined time period between a start time of the first predetermined time period and a start time of the inactivation state of the transmission control signal;
• and
• wherein electronic potentials in regions of the transmission transistor and the floating diffusion node are higher than electronic potential in region of the photodiode in the initialization state, and a depletion region in the region of the photodiode does not increase.