Transistor arrangement, integrated circuit and method for operating field effect transistors

A transistor arrangement comprising:

• a first and a second field effect transistor, each of which has a first and a second source/drain terminal and a control terminal for application of a first or a second signal, the two field effect transistors being of the same conduction type;
• wherein the transistor arrangement is configured such that alternately:
• the first signal can be applied to the control terminal of the first field effect transistor and, simultaneously, the second signal can be applied to the control terminal of the second field effect transistor;
• and
• the second signal can be applied to the control terminal of the first field effect transistor and, simultaneously, the first signal can be applied to the control terminal of the second field effect transistor:
• wherein the first and the second signal are applied alternately to the control terminals of the first and second field effect transistors with an alternating frequency which is at least as great as the cut-off frequency of the noise characteristic of the field effect transistors.

A transistor arrangement comprising:

• a first and a second field effect transistor, each of which has a first and a second source/drain terminal and a control terminal for application of a first or a second signal, the two field effect transistors being of the same conduction type;
• wherein the transistor arrangement is configured such that alternately:
• the first signal can be applied to the control terminal of the first field effect transistor and, simultaneously, the second signal can be applied to the control terminal of the second field effect transistor;
• and
• the second signal can be applied to the control terminal of the first field effect transistor and, simultaneously, the first signal can be applied to the control terminal of the second field effect transistor;
• wherein the control terminal of the first field effect transistor is coupled to a first switching element, which can be switched by means of a first clock signal with an alternating frequency;
• wherein, the control terminal of the second field effect transistor is coupled to a second switching element, which can be switched by means of a second clock signal, which is complementary to the first clock signal, with the alternating frequency;
• and wherein, by means of the respective switching element, the first or the second signal is alternately applied to the respective control terminal of the respective field effect transistor with the alternating frequency.

A method for operating field effect transistors comprising:

• connecting a first and a second field effect transistor to one another, each of the field effect transistors having a first and a second source/drain terminal and having a control terminal for application of a first or a second signal, the two field effect transistors being of the same conduction type;
• setting up the transistor arrangement such that alternately the first signal is applied to the control terminal of the first field effect transistor and, simultaneously, the second signal is applied to the control terminal of the second field effect transistor and the second signal is applied to the control terminal of the first field effect transistor and, simultaneously, the first signal is applied to the control terminal of the second field effect transistor;
• and
• alternately applying the first and second signals such that the quasi-Fermi energy in a boundary region between channel region and gate insulating layer of the field effect transistors is periodically altered by a value which is greater than the product of the Boltzmann constant and the absolute temperature.