Methods of testing fuse elements for memory devices

A method of testing a memory device, comprising:

• testing a fuse element of the memory device a first time, the first testing of the fuse element comprising:
• electrically connecting a first test probe to a program terminal of the memory device, the program terminal being adapted for changing a conductive state of the fuse element of the memory device while programming the memory device and also being adapted to supply a first voltage to the fuse element during testing, wherein the first test probe is also electrically connected to a testing device such that the program terminal is electrically connected to the testing device via the first test probe,
• electrically connecting a second test probe to a ground terminal, wherein the fuse element is part of an electrical circuit path of the memory device between the program terminal and the ground terminal, and wherein the second test probe is also electrically connected to the testing device such that the ground terminal is electrically connected to the testing device via the second test probe,
• applying the first voltage with the testing device between the program terminal and the ground terminal such that at least part of a first current resulting from the first voltage flows through the fuse element, wherein the first voltage and the at least part of the first current flowing through the fuse element is not large enough to change the conductivity state of the fuse element,
• measuring the first current resulting from the first voltage with the testing device, and evaluating the conductive state of the fuse element based on the first current;
• performing a reliability test on the memory device;
• testing the fuse element of the memory device a second time after performing the reliability test, the second testing of the fuse element comprising a same method as the first testing;
• and
• comparing the conductivity state of the fuse element from the first and second testings to determine whether the fuse element was damaged during the reliability test.

A method of making a memory device comprising:

• testing a fuse element of the memory device, the testing of the fuse element comprising:
• electrically connecting a first test probe to a program terminal of the memory device, the program terminal being adapted for changing a conductive state of the fuse element for the memory device while programming the memory device, and also adapted for testing the memory device during normal operation, wherein the memory device is both programmed and tested through the program terminal during normal operation, and wherein the first test probe is also electrically connected to a testing device such that the program terminal is electrically connected to the testing device via the first test probe,
• electrically connecting a second test probe to a ground terminal, wherein the fuse element is part of an electrical circuit path of the memory device between the program terminal and the ground terminal, and wherein the second test probe is also electrically connected to the testing device such that the ground terminal is electrically connected to the testing device via the second test probe,
• applying a first voltage with the testing device between the program terminal and the ground terminal such that at least part of a first current resulting from the first voltage flows through the fuse element, wherein the first voltage and the at least part of the first current flowing through the fuse element is not large enough to change the
• conductivity state of the fuse element,
• measuring the first current of the first voltage with the testing device, and evaluating the conductive state of the fuse element based on the first current;
• and
• programming the memory device.