Electron-emitting device and manufacturing method thereof
AssigneeCanon Kabushiki Kaisha
InventorsTakeshi Ichikawa, Ryoji Fujiwara, Daisuke Sasaguri
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Abstract
There is provided an electron-emitting device of a field emission type, with which the spot size of an electron beam is small, an electron emission area is large, highly efficient electron emission is possible with a low voltage, and the manufacturing process is easy. The electron-emitting device includes a layer 2 which is electrically connected to a cathode electrode 5, and a plurality of particles 3 which contains a material having a resistivity lower than that of a material constituting the layer 2, and is wherein a density of particles 3 in the layer 2 is 1×1014/cm3 or more and 5×1018/cm3 or less.
Claims18
An electron-emitting device comprising:
- a cathode electrode;
- and
- a layer connected to the cathode electrode, wherein
- a plurality of groups of particles, each group being constituted by at least two particles which comprise metal as a main component and are adjacent to each other, are discretely arranged apart from each other by a distance equal to an average film thickness of the layer or more in at least a surface and surface vicinity region of the layer, wherein the surface and surface vicinity region between the groups contain substantially no metal,
- the layer comprises as a main component a material which has resistivity higher than resistivity of the particles,
- the adjacent two particles are distinct crystalline particulates arranged to be separated from others in a range of 5 nm or less, or to be just in contact with another, and
- the size of the adjacent two particle in diameter are smaller than the average film thickness of the layer and one of the adjacent two particles is arranged to be nearer to the cathode electrode than the other particle.
Dependencies are inferred from the claim text.