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US 7,732,996 B2Granted
Piezoelectric thin film device
AssigneeHitachi Cable, Ltd.
InventorsKenji Shibata, Fumihito Oka
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Abstract
A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and an upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and in which dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)−(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0.20 or less.
Claims4
A piezoelectric thin film device, comprising:
- a lower electrode, a piezoelectric thin film and an upper electrode, wherein:
- the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and wherein:
- dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)−(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0.20 or less.
Dependencies are inferred from the claim text.