Power semiconductor component with semiconductor chip stack in a bridge circuit and method for producing the same

A power semiconductor component comprising a power semiconductor chip stack, the power semiconductor chip stack comprising:

• a base power semiconductor chip and a power semiconductor chip stacked on the rear side of the base power semiconductor chip, and a rewiring structure being arranged within a rear side metallization of the base power semiconductor chip;
• and
• a plurality of surface-mountable external lead connections,
• wherein the power semiconductor chip stack comprises a low-side switch and high-side switch in a bridge circuit, the power semiconductor chip stack having the low-side switch as the base power semiconductor chip and the high-side switch as the stacked power semiconductor chip, and a wiring film or wiring plate for a series circuit of the switches being arranged on the rear side of the base power semiconductor chip as the rewiring structure, and
• wherein the wiring film has on its underside at least one large-area drain contact pad for a drain electrode of the base power semiconductor chip and at least two contact pads on its top side as source and gate contact pads for source and gate electrodes, respectively, of the stacked power semiconductor chip, and the drain contact pad and the source contact pad being electrically connected to one another via through contacts through the wiring film,
• wherein the power semiconductor chip stack and the wiring film or the wiring plate are embedded in a plastic housing composition, and wherein the surface-mountable external lead connections are partially embedded in an underside of the plastic housing composition so that an underside of each of the surface-mountable external lead connections is free of the plastic housing composition.