Semiconductor device having a through electrode with a low resistance and method of manufacturing the same
AssigneeElpida Memory, Inc.
InventorShiro Uchiyama
Life of this patent
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Abstract
A method of manufacturing a through electrode. While using at least a first conductive film for a gate electrode as a mask, an inner trench and a peripheral trench is formed. The Inner trench is provided for an inner through electrode having a columnar semiconductor. The peripheral trench is provided for a peripheral through electrode around an annular semiconductor surrounding the inner trench. The inner trench and the peripheral trench are filled with a through electrode insulation film and a through electrode conductive film, respectively, to form an inner through electrode and a peripheral through electrode.
Claims27
A semiconductor device comprising:
- an inner trench for an inner through electrode formed in a semiconductor substrate and having a columnar semiconductor, said inner trench being formed while at least a first conductive film formed on said semiconductor substrate for a gate electrode is used as a mask;
- a peripheral trench for a peripheral through electrode formed on the semiconductor substrate around an annular semiconductor surrounding said inner trench for said inner through electrode, said peripheral trench being formed while at least the first conductive film for the gate electrode is used as the mask;
- and
- said inner through electrode and said peripheral through electrode formed by etching said first conductive film and filling said inner trench and said peripheral trench with a through electrode insulation film and a through electrode conductive film, respectively.
A semiconductor device comprising:
- a through electrode, comprising:
- at least one columnar semiconductor placed within an inner trench with a gap left between the at least one columnar semiconductor and sides of the inner trench;
- an inner through electrode embedded within the gap;
- a through electrode insulation film being formed in the inner trench;
- a peripheral through electrode embedded within an outer trench surrounding said inner through electrode;
- and
- a through electrode conductive film being formed in the outer trench.
A semiconductor device, comprising:
- a through electrode, comprising:
- a set of semiconductor pillars formed in an inner trench, the semiconductor pillars being arranged adjacently to one another to form a first gap thereamong;
- a through electrode insulation film being formed in the inner trench;
- a semiconductor ring formed to surround the set of semiconductor pillars to form a second gap therebetween;
- a first conductive material formed to fill the first and second gaps;
- a second conductive material formed in an outer trench to surround the semiconductor ring;
- and
- a through electrode conductive film being formed in the outer trench.
Dependencies are inferred from the claim text.