Impurity doped UV protection layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhen-Cheng Wu, Yung-Cheng Lu, Chung-Chi Ko
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Abstract
An ultra-violet (UV) protection layer is formed over a semiconductor workpiece before depositing a UV curable dielectric layer. The UV protection layer prevents UV light from reaching and damaging underlying material layers and electrical devices. The UV protection layer comprises a layer of silicon doped with an impurity, wherein the impurity comprises O, C, H, N, or combinations thereof. The UV protection layer may comprise SiOC:H, SiON, SiN, SiCO:H, combinations thereof, or multiple layers thereof, as examples.
Claims35
A semiconductor device, comprising:
- a workpiece;
- a gate disposed over the workpiece;
- a first ultra-violet (UV) protection layer over the gate, wherein a non-planar portion of the first UV protection layer abuts and conforms to the gate, and wherein the first UV protection layer comprises at least one layer of silicon doped with oxygen (O), carbon (C), hydrogen (H), nitrogen (N), or combinations thereof;
- a second UV protection layer over the first UV protection layer, wherein a portion of the second UV protection layer conforms to the non-planar portion of the first UV protection layer;
- and
- a contact etch stop layer over the second UV protection layer.
A semiconductor device, comprising:
- a workpiece;
- a gate disposed over the workpiece;
- a contact etch stop layer over and abutting the gate;
- and
- an ultra-violet (UV) protection layer over the contact etch stop layer, wherein the UV protection layer abuts and conforms to a non-planar portion of the etch stop layer, and wherein the UV protection layer comprises at least one layer of silicon doped with oxygen (O), carbon (C), hydrogen (H), nitrogen (N), or combinations thereof.
Dependencies are inferred from the claim text.