Integrated circuit, method for manufacturing an integrated circuit, memory cell array, memory module, and device

An integrated circuit comprising a memory cell array comprising a plurality of mechanical stress compensation areas, each stress compensation area comprising compressible material or material having a negative thermal expansion coefficient, spatial positions and dimensions of the stress compensation areas being chosen such that mechanical stress occurring within the memory cell array is at least partly compensated by the stress compensation areas,

• wherein the memory cell array comprises a programmable metallization cell array,
• wherein the memory cell array comprises a reactive electrode layer, an inert electrode layer, and a solid electrolyte layer that is positioned between the reactive electrode layer and the inert electrode layer, the solid electrolyte layer being electrically connected to the reactive electrode layer and the inert electrode layer, and
• wherein at least a part of at least one stress compensation area is located within at least one of the solid electrolyte layer, the inert electrode layer, the reactive electrode layer, and at least one dielectric layer that is disposed above the solid electrolyte layer.

A memory cell array comprising a plurality of voids, spatial positions and dimensions of the voids being chosen such that mechanical stress occurring within the memory cell array is at least partly compensated by the voids,

• wherein the memory cell array comprises a solid electrolyte random access memory cell array comprising a reactive electrode layer, an inert electrode layer, and a solid electrolyte layer positioned between the reactive electrode layer and the inert electrode layer, the solid electrolyte layer being electrically connected to the reactive electrode layer and the inert electrode layer, and
• wherein at least a part of at least one void is located within at least one of the solid electrolyte layer, the inert electrode layer, the reactive electrode layer, and the at least one dielectric layer that is disposed above the solid electrolyte layer.

A memory module comprising at least one memory device comprising a memory cell array that comprises a plurality of voids, spatial positions and dimensions of the voids being chosen such that mechanical stress occurring within the memory cell array is at least partly compensated by the voids, wherein the memory module comprises a solid electrolyte random access memory cell array comprising a reactive electrode layer, an inert electrode layer, and a solid electrolyte layer positioned between the reactive electrode layer and the inert electrode layer, the solid electrolyte layer being electrically connected to the reactive electrode layer and the inert electrode layer, and

• wherein at least a part of at least one void is located within at least one of the solid electrolyte layer, the inert electrode layer, the reactive electrode layer, and at least one dielectric layer that is disposed above the solid electrolyte layer.

A memory module comprising at least one memory device comprising a memory cell array that comprises a plurality of mechanical stress compensation areas, each stress compensation area comprising compressible material or material having a negative thermal expansion coefficient;

• and spatial positions and dimensions of the stress compensation areas being chosen such that mechanical stress occurring within the memory cell array is at least partly compensated by the stress compensation areas,
• wherein the memory module comprises a programmable metallization cell array, wherein the memory cell array comprises a reactive electrode layer, an inert electrode layer, and a solid electrolyte layer that is positioned between the reactive electrode layer and the inert electrode layer, the solid electrolyte layer being electrically connected to the reactive electrode layer and the inert electrode layer, and
• wherein at least a part of at least one stress compensation area is located within at least one of the solid electrolyte layer, the inert electrode layer, the reactive electrode layer, and at least one dielectric layer that is disposed above the solid electrolyte layer.

A semiconductor device comprising a plurality of voids, spatial positions and dimensions of the voids being chosen such that mechanical stress occurring within the device is at least partly compensated by the voids,

• wherein the semiconductor device comprises a solid electrolyte random access memory cell array comprising a reactive electrode layer, an inert electrode layer, and a solid electrolyte layer positioned between the reactive electrode layer and the inert electrode layer, the solid electrolyte layer being electrically connected to the reactive electrode layer and the inert electrode layer, and
• wherein at least a part of at least one void is located within at least one of the solid electrolyte layer, the inert electrode layer, the reactive electrode layer, and at least one dielectric layer that is disposed above the solid electrolyte layer.