US 7,732,887 B2 · Schottky junction diode devices in CMOS

Abstract

A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped to a second conductivity type opposite that of the first conductivity type. A region of metal-containing material is disposed over the first well to form a Schottky junction at an interface between the region of metal-containing material and the first well. In one embodiment, a first well contact is disposed in a portion of the first well. A second well is disposed over the substrate wherein the second well includes a material doped to the first conductivity type. In one embodiment, the first well and the second well are not in direct contact with one another.

Claims16

Dependent claims

A Schottky junction diode device, comprising:

a substrate including a material doped to a first conductivity type;
a first well disposed in said substrate, said first well including a material doped to a second conductivity type opposite that of the first conductivity type;
a region of metal-containing material disposed in the first well to form a Schottky junction at an interface between the region of metal-containing material and the first well;
a first well contact in electrical contact with the first well;
a second well disposed in said substrate, the second well including a material doped to the first conductivity type, the first well and the second well not being in direct contact with one another;
and
a region of the substrate disposed between the first well and the second well,
wherein the first well contact is formed in a closed loop shape which surrounds the Schottky junction.

5 more elements

Dependencies are inferred from the claim text.

Schottky junction diode devices in CMOS

Life of this patent

Schottky junction diode devices in CMOS

Life of this patent

Abstract

Claims16