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US 7,732,886 B2Granted
Pin photodiode structure
AssigneeUnited Microelectronics Corp.
InventorsHung-Lin Shih, Tsan-Chi Chu, Wen-Shiang Liao, Wen-Ching Tsai
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Abstract
A PIN photodiode structure includes a substrate, a P-doped region disposed in the substrate, an N-doped region disposed in the substrate, and a first semiconductor material disposed in the substrate and between the P-doped region and the N-doped region.
Claims9
A PIN photodiode structure, comprising:
- a semiconductor substrate comprising Si;
- a P-doped region disposed in said substrate;
- an N-doped region disposed in said substrate;
- a first semiconductor material disposed in said semiconductor substrate and between said P-doped region and said N-doped region;
- and
- a second semiconductor material connected to and bulging from said first semiconductor material, wherein said second semiconductor material comprises Ge.
3 more elements
Dependencies are inferred from the claim text.