Photoelectric conversion device and method of manufacturing the same

A photoelectric conversion device with an effective region, in which a photoelectric conversion unit is not shielded against light, and a light-shielded region, in which a photoelectric conversion unit is shielded against light, the photoelectric conversion device comprising:

• a semiconductor substrate, in which the photoelectric conversion unit in the effective region and the photoelectric conversion unit in the light-shielded region are arranged;
• a multilayer wiring structure arranged on the semiconductor substrate, the multilayer wiring structure including a first wiring layer, which serves as a top wiring layer in the effective region and which includes aluminum as a principal component, a first insulation film arranged in the effective region and the light-shielded region so as to cover the first wiring layer, and a second wiring layer, which serves as a top wiring layer arranged on the first insulation film in the light-shielded region and which includes aluminum as a principal component, wherein the first insulation film includes, in the effective region, a first portion that is positioned above the photoelectric conversion unit and that functions as at least a part of an interlayer lens;
• a color filter arranged above the interlayer lens;
• and
• a planarized layer arranged between the color filter and the interlayer lens,
• wherein the multilayer wiring structure further includes a first antireflection film arranged between the planarized layer and the interlayer lens, a third wiring layer, which is arranged beneath the first wiring layer and which includes aluminum as a principal component, a second insulation film arranged in the effective region and the light-shielded region so as to cover the third wiring layer and insulate the first wiring layer and the third wiring layer from each other, and a second antireflection film arranged between the first insulation film and the second insulation film, and
• wherein, letting λ be a wavelength of light transmitted through the color filter, and letting n1 and n2 be refractive indices of the second insulation film and the first insulation film, respectively, the second antireflection film is formed to have a thickness of λ/4√(n1×n2) and a refractive index of √(n1×n2).