Semiconductor device and method for manufacturing semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorGwang Su Kim
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Abstract
Provided are a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes: a gate electrode formed of polysilicon on a substrate with a gate insulating layer interposed between the gate electrode and the substrate; a source region and a drain region formed on the substrate on either side of the gate electrode; a PMD (poly-metal dielectric) liner nitride layer having a non-stoichiometric structure formed on the gate electrode, the source region, and the drain region; and an interlayer insulating layer formed on the PMD liner nitride layer.
Claims9
A semiconductor device comprising:
- a gate electrode formed of polysilicon on a substrate with a gate insulating layer interposed between the gate electrode and the substrate;
- a source region and a drain region formed on the substrate on either side of the gate electrode;
- a PMD (poly-metal dielectric) liner nitride layer having a non-stoichiometric structure formed on the gate electrode, the source region, and the drain region;
- and
- an interlayer insulating layer formed on the PMD liner nitride layer,
- wherein the PMD liner nitride layer comprises about 5 to about 35 atomic percent hydrogen dangling bonds.
Dependencies are inferred from the claim text.