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AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Michael P. Chudzik, Ramachandra Divakaruni, Geng Wang, Robert C. Wong, Haining S. Yang
Estimating the term…
A metal gate stack containing a metal layer having a mid-band-gap work function is formed on a high-k gate dielectric layer. A threshold voltage adjustment oxide layer is formed over a portion of the high-k gate dielectric layer to provide devices having a work function near a first band gap edge, while another portion of the high-k dielectric layer remains free of the threshold voltage adjustment oxide layer. A gate stack containing a semiconductor oxide based gate dielectric and a doped polycrystalline semiconductor material may also be formed to provide a gate stack having a yet another work function located near a second band gap edge which is the opposite of the first band gap edge. A dense circuit containing transistors of p-type and n-type with the mid-band-gap work function are formed in the region containing the threshold voltage adjustment oxide layer.
A semiconductor structure comprising a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack, each located on a semiconductor substrate, wherein said second gate stack constitutes a gate of a p-type field effect transistor and said fourth gate stack constitutes a gate of an n-type field effect transistor, wherein said first gate stack comprises:
A semiconductor structure comprising:
A semiconductor structure comprising:
Dependencies are inferred from the claim text.