MOS transistor and manufacturing method thereof
AssigneeDongbu Electronics Co., Ltd.
InventorHyuk Park
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Abstract
Disclosed are a MOS transistor having a low resistance ohmic contact characteristic and a manufacturing method thereof capable of improving a drive current of the MOS transistor. A gate oxide layer, a gate electrode, and a spacer are formed on a silicon substrate, and a silicon carbide layer is deposited thereon. A photolithography process is performed, and the silicon carbide layer is etched except for predetermined portions corresponding to source-drain regions and the gate electrode. Then, a metal layer is formed on the resulting structure after performing a source-drain ion implantation process. The metal layer is heated to form a salicide layer on the gate electrode and the source-drain diffusion regions. Then, the unreacted metal layer is removed, thereby forming the MOS transistor.
Claims11
A MOS transistor comprising:
- a silicon substrate;
- a gate oxide layer on the silicon substrate having a predetermined width;
- a gate electrode on the gate oxide layer;
- spacers on sidewalls of the gate electrode;
- source-drain diffusion regions in the silicon substrate and opposite sides of the gate electrode;
- a silicon carbide and a graphite layer on an upper portion of the source-drain diffusion regions and an upper portion of the gate electrode;
- and
- a nickel layer on the silicon carbide and the graphite layer.
Dependencies are inferred from the claim text.