Semiconductor device and semiconductor integrated circuit using the same

A semiconductor device comprising:

• a first circuit block including a plurality of first transistors, each of the plurality of first transistors having
• a first semiconductor layer formed on a semiconductor substrate via a first embedded oxide film;
• a first source region and a first drain region formed in the first semiconductor layer and having the same thickness as that of the first semiconductor layer;
• a first channel region formed between the first source region and the first drain region and formed in the first semiconductor region, the first channel region being a full depletion region;
• a first gate formed on a first main surface of the first channel region via a first gate insulating film;
• a second gate formed of a conductive layer formed in contact with a bottom surface of the first embedded oxide film and electrically connected with the first gate;
• and
• a first insulating separating layer formed on the semiconductor substrate so as to surround the first semiconductor layer;
• and
• a second circuit block including a plurality of second transistors, each of the plurality of second transistors having
• a second semiconductor layer formed on the semiconductor substrate via a second embedded oxide film;
• a second source region and a second drain region formed in the second semiconductor layer and having the same thickness as that of the second semiconductor layer;
• a second channel region formed between the second source region and the second drain region and formed in the second semiconductor region, the second channel region being a full depletion region;
• a third gate formed on a first main surface of the second channel region via a second gate insulating film;
• a fourth gate formed of a conductive layer formed in contact with a bottom surface of the second embedded oxide film;
• and
• a second insulating separating layer formed on the semiconductor substrate so as to surround the second semiconductor layer,
• wherein an output signal of the first circuit block is input to the fourth gates of the plurality of the second transistors, and
• wherein an input signal to the third gate of each second transistor is independent of the input signal into the fourth gate of that same second transistor.