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US 7,732,853 B2Granted
Multi-bit nonvolatile memory devices including nano-crystals and trench
AssigneeSamsung Electronics Co., Ltd.
InventorIl-gweon Kim
Life of this patent
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Abstract
Nonvolatile integrated circuit memory devices having a 2-bit memory cell include a substrate, a source region and a drain region in the substrate, a step recess channel between the source region and the drain region, a trapping structure including a plurality of charge trapping nano-crystals on the step recess channel, and a gate on the trapping structure. Related fabrication methods are also described.
Claims10
A multi-bit nonvolatile memory cell comprising:
- a substrate;
- spaced apart source and drain regions in the substrate;
- a trench in the substrate between the spaced apart source and drain regions;
- a plurality of charge trapping nano-crystals on the substrate between the spaced apart source and drain regions;
- a gate on the substrate that includes a protrusion portion that extends into the trench, wherein the protrusion portion is closer to the source region than to the drain region;
- and
- a layer between the nano-crystals and the substrate, that is thicker on the substrate outside the trench than in the trench.
4 more elements
Dependencies are inferred from the claim text.