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AssigneePanasonic Corporation
InventorsHiroyuki Tanaka, Yukihiro Kaneko, Yoshihisa Kato
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A semiconductor memory device is composed of a field effect transistor using the interface between a ferroelectric film and a semiconductor film as the channel and including a gate electrode to which a voltage for controlling the polarization state of the ferroelectric film is applied and source/drain electrodes provided on both ends of the channel to detect a current flowing in the channel in accordance with the polarization state. The semiconductor film is made of a material having a spontaneous polarization and the direction of the spontaneous polarization is parallel with the interface between the ferroelectric film and the semiconductor film.
A semiconductor memory device comprising a field effect transistor using an interface between a ferroelectric film and a semiconductor film as a channel, wherein the field effect transistor comprises:
Dependencies are inferred from the claim text.