Pixel sensor with reduced image lag

A method of forming a semiconductor structure comprising:

• forming a second conductivity type charge collection well directly above a lightly-doped first conductivity type region within a lightly-doped first conductivity type semiconductor layer in a semiconductor substrate;
• forming a transfer transistor on said semiconductor substrate, wherein said transfer transistor comprises a floating drain formed in said semiconductor substrate, a gate dielectric formed directly on a top surface of said lightly-doped first conductivity type semiconductor layer, and a gate electrode formed directly on said gate dielectric, and wherein said second conductivity type charge collection well is a source of said transfer transistor;
• and
• forming a tensile-stress-generating structure on said gate electrode, wherein said tensile-stress-generating structure applies a normal tensile stress between said second conductivity type charge collection well and said floating drain in a direction connecting said second conductivity type charge collection well and said floating drain.

A design structure embodied in a machine readable medium for designing, manufacturing, or testing a design, said design structure comprising:

• a first data representing a lightly-doped first conductivity type semiconductor layer in a semiconductor substrate;
• a second data representing a second conductivity type charge collection well located directly on the lightly-doped first conductivity type semiconductor layer, wherein the first data and the second data collectively represent a photodiode;
• a third data representing a transfer transistor and including said second data and a fourth data representing a floating drain, wherein said second conductivity type charge collection well constitutes a source of said transfer transistor;
• and
• a fifth data representing a tensile-stress-generating structure located on said transfer transistor and including a sixth data representing a body of said transfer transistor to which a normal tensile stress is applied in a direction connecting said second conductivity type charge collection well and said floating drain.