Back to results
US 7,732,844 B2Granted
Crosstalk improvement through P on N structure for image sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Wei Chang, Han-Chi Liu, Chun-Yao Ko, Shou-Gwo Wuu
Life of this patent
Estimating the term…
Abstract
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
Claims19
A semiconductor device, comprising:
- a semiconductor substrate of a first-type dopant;
- a semiconductor layer of a second-type dopant and directly on the semiconductor substrate, wherein the second-type dopant is opposite to the first-type dopant;
- a first and a second wells of the second-type dopant and a first depth, spaced horizontally a distance from each other, formed in a top portion of the semiconductor layer, defining a region of the semiconductor layer horizontally interposed between the first and second wells;
- and
- a photo-sensitive structure in the region of the semiconductor layer, including:
- a first doped layer of the first-type dopant and a second depth, the first doped layer contacting the semiconductor layer of the second-type dopant;
- and
- a second doped layer of the second-type dopant and a third depth, the second doped layer directly contacting the second well on a first side, and directly contacting the first doped layer on a second side and third side,
- wherein the first depth is greater than the second depth and the second depth is greater than the third depth.
6 more elements
A semiconductor device, comprising:
- a semiconductor substrate of a first-type dopant;
- a semiconductor layer of a second-type dopant and directly on the semiconductor substrate, wherein the second-type dopant is opposite to the first-type dopant;
- a first well of the second-type dopant, having a first doping concentration and formed in the semiconductor layer;
- a second and a third wells of the second-type dopant, having a second doping concentration greater than the first doping concentration, disposed in the semiconductor layer and interposed by the first well;
- a photo-sensitive structure in the first well region, wherein the photo-sensitive structure directly contacts the second well from a first side and further includes:
- a first doped layer of the first-type dopant;
- and
- a second doped layer of the second-type dopant, the second doped layer being overlying the first doping layer;
- an isolation structure positioned in the first well region and directly adjacent the first side of the photo-sensitive structure;
- and
- a device having an electrode positioned above and coupled with the semiconductor layer of the second-type dopant and adjacent a second side of the photo-sensitive structure opposite of the first side.
8 more elements
Dependencies are inferred from the claim text.