Semiconductor device and method for fabricating the same
AssigneePanasonic Corporation
InventorsAkio Sebe, Naoki Kotani, Shinji Takeoka, Gen Okazaki, Junji Hirase, Kazuhiko Aida
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Abstract
A MIS transistor includes a gate electrode portion, insulating sidewalls formed on side surfaces of the gate electrode portion, source/drain regions and a stress film formed so as to cover the gate electrode portion and the source/drain regions. A height of an upper surface of the gate electrode portion is smaller than a height of an upper edge of each of the insulating sidewalls. A thickness of first part of the stress film located on the gate electrode portion is larger than a thickness of second part of the stress film located on the source/drain regions.
Claims19
A semiconductor device comprising a first MIS transistor of a first conductive type formed in a first region in a semiconductor substrate,
- wherein the first MIS transistor includes
- a first gate insulating film formed on the first region,
- a first gate electrode portion formed on the first gate insulating film,
- first insulating sidewalls formed on side surfaces of the first gate electrode portion,
- first source/drain regions, each being formed in part of the first region located at a side of an associated one of the first insulating sidewalls, and
- a first stress film formed so as to cover the first gate electrode portion and the first source/drain regions,
- wherein the first gate electrode portion includes a first gate electrode formed on the first gate insulating film and a first silicide layer formed on the first gate electrode,
- wherein a height of an upper surface of the first silicide layer of the first gate electrode portion is lower than a height of an upper edge of each said first insulating sidewall, and
- wherein a thickness of first part of the first stress film located on the first gate electrode portion is larger than a thickness of second part of the first stress film located on the first source/drain regions.
Dependencies are inferred from the claim text.