Back to results
US 7,732,837 B2Granted
Nitride semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsWataru Saito, Ichiro Omura
Life of this patent
Estimating the term…
Abstract
In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an undoped or n-type aluminum gallium nitride (AlGaN) layer serving as a barrier layer.
Claims7
A nitride semiconductor device comprising:
- an undoped first aluminum gallium nitride (AlxGa1-xN (0≦x≦1)) layer as a channel layer;
- an undoped or n-type second aluminum gallium nitride (AlyGa1-yN (0≦y≦1, x<y)) layer formed as a barrier layer on the first aluminum gallium nitride layer;
- a p-type third aluminum gallium nitride (AlzGa1-zN (0≦z≦1)) layer having portions formed in stripe-shaped recess portions formed at predetermined intervals to project over the second aluminum gallium nitride layer, a bottom surface of the third aluminum gallium nitride layer reaching the first aluminum gallium nitride layer by penetrating the second aluminum gallium nitride layer;
- a source electrode formed on the second aluminum gallium nitride layer to electrically connected to one ends of the stripe-shaped portions of the third aluminum gallium nitride layer formed in the recess portions;
- a drain electrode formed on the second aluminum gallium nitride layer to be spaced apart from the other ends of the stripe-shaped portions of the third aluminum gallium nitride layer;
- and
- a gate electrode formed on the second aluminum gallium nitride layer between the source electrode and the drain electrode in a side of the source electrode with respect to the other ends of the stripe-shaped portions of the third aluminum gallium nitride layer.
4 more elements
Dependencies are inferred from the claim text.