Semiconductor ESD device and method of making same

An ESD protection device, the ESD protection device comprising:

• an SCR structure comprising,
• a p-type anode region,
• an n-type n-base region coupled to the anode region,
• a p-type p-base region coupled to the n-type n-base region, and
• an n-type cathode region coupled to the p-type p-base region;
• and
• a BJT trigger element comprising,
• an n-type collector,
• a p-type ESD region coupled to the n-type collector region,
• a p-type base region coupled to the SCR p-type p-base region, and wherein the doping concentration of the p-type base regions is less then the doping concentration of the ESD region, and
• an n-type cathode region coupled to the p-type base.

A method of forming a semiconductor device, the method comprising:

• forming an isolation region in a semiconductor body, wherein the isolation region defines an active area of a first conductivity type;
• forming a first doped region within the active area, wherein the first doped region is of a second conductivity type opposite the first conductivity type;
• forming a second doped region at the surface of the first doped region, wherein the second doped region is of the first conductivity type;
• forming a third doped region at the surface of the first doped region, wherein the third doped region is of the first conductivity type, and wherein the third doped region has a higher doping concentration than the active area;
• and
• forming a fourth doped region in and surrounded by the third doped region, wherein the fourth doped region is of the second conductivity type.

A semiconductor device comprising:

• a bipolar transistor comprising:
• a first ESD device region disposed within a semiconductor body, the semiconductor body of a first conductivity type,
• an isolation region surrounding the first ESD device region,
• a first doped region of a second conductivity type disposed at a surface of the semiconductor body within the first ESD device region, the second conductivity type different from the first conductivity type,
• a second doped region of the second conductivity type disposed at a surface of the semiconductor body within the first ESD device region, and
• a third doped region of the first conductivity type disposed between the semiconductor body within the first ESD device region and at least a portion of the second doped region;
• and
• an SCR device comprising:
• a second ESD device region disposed within the semiconductor body,
• an isolation region surrounding the second ESD device region,
• a fourth doped region of the second semiconductor type disposed in the semiconductor body within the second ESD device region,
• a fifth doped region of the second conductivity type disposed at a surface of the fourth doped region within the second ESD device region,
• a sixth doped region of the first conductivity type disposed between the fourth doped region within the second ESD device region and the fifth doped region, the sixth doped region being doped at a higher concentration than the semiconductor body,
• a seventh doped region of the first conductivity type disposed at a surface of the fourth doped region within the second ESD device region, and
• an eighth doped region of the second conductivity type disposed at a surface of the fourth doped region within the second ESD device region, wherein the eighth doped region in the second ESD device region is coupled to the first doped region in the first ESD device region.