Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within
AssigneeShowa Denko K.K.
InventorsRyouichi Takeuchi, Wataru Nabekura, Takashi Udagawa
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Abstract
A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
Claims14
A pn-junction compound semiconductor light-emitting device comprising (i) a stacked structure including a light-emitting part composed of aluminum gallium indium phosphide, said light-emitting part comprising a light-emitting layer, a lower clad layer and an upper clad layer, and (ii) a light-permeable substrate for supporting the stacked structure, the stacked structure including a conductive boron containing Group III-V compound semiconductor layer formed on the light-emitting part, wherein the light permeable substrate is joined to the stacked structure through the boron containing Group III-V compound semiconductor layer, and
- wherein the respective layers constituting the light-emitting device are arranged in the order of the light-permeable substrate, the conductive boron containing Group III-V compound semiconductor layer, the upper clad layer, the light-emitting layer and the lower clad layer.
A method for producing a pn-junction compound semiconductor light-emitting device comprising (i) a stacked structure including a light-emitting part composed of aluminum gallium indium phosphide, said light-emitting part comprising a light-emitting layer, a lower clad layer and an upper clad layer, and (ii) a light-permeable substrate for supporting the stacked structure, the stacked structure including a conductive boron containing Group III-V compound semiconductor layer formed on the light-emitting part, wherein the light permeable substrate is joined to the stacked structure through the boron containing Group III-V compound semiconductor layer, and
- wherein the respective layers constituting the light-emitting device are arranged in the order of the light-permeable substrate, the conductive boron containing Group III-V compound semiconductor layer, the upper clad layer, the light-emitting layer and the lower clad layer,
- said method comprising the steps of:
- forming a stacked structure through sequentially stacking on a crystal substrate a lower cladding layer, a light-emitting layer composed of n-type or p-type aluminum gallium indium phosphide, an upper cladding layer, and an n-type or a p-type conductive layer composed of a boron-containing Group III-V compound semiconductor, and a step of joining the conductive layer to a light-permeable substrate.
Dependencies are inferred from the claim text.