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US 7,732,827 B2Granted
High efficient phosphor-converted light emitting diode
AssigneeEpistar Corporation
InventorsChien-Yuan Wang, Chih-Chiang Lu, Min-Hsun Hsieh
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Abstract
A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.
Claims20
A light-emitting device, comprising:
- a semiconductor structure with an active layer emitting a first wavelength light;
- a conversion layer on said semiconductor structure, said conversion layer absorbs said first wavelength light and converts at least a portion of said first wavelength light into a second wavelength light;
- and
- a first filter layer in-between said semiconductor structure and said conversion layer, wherein said first filter layer having a light transmissivity of more than 50% to the first wavelength light and a light reflectivity of more than 50% to the second wavelength light.
1 more element
A light-emitting diode, comprising:
- a semiconductor structure having an active layer to emit a first wavelength light;
- a conversion layer on said semiconductor structure, said conversion layer absorbs said first wavelength light and converts at least a portion of said first wavelength light into a second wavelength light;
- a first filter layer, in between said semiconductor structure and said conversion layer;
- and
- a second filter layer on said conversion layer wherein said light-emitting diode emits white light, and;
- wherein said second filter layer having a light reflectivity of more than 50% to said first wavelength light and a light transmissivity of more than 50% to said second wavelength light.
3 more elements
A light-emitting diode, comprising:
- a semiconductor structure with an active layer emitting a first wavelength light;
- a conversion layer on said semiconductor structure;
- and
- a first filter layer in-between said semiconductor structure and said conversion layer, wherein said first wavelength light passes through said filter layer and enters said conversion layer and is partially absorbed and converted into a second wavelength light and unabsorbed first wavelength light is mixed with said second wavelength light and white light is generated.
1 more element
Dependencies are inferred from the claim text.