Semiconductor and method of semiconductor fabrication

A semiconductor device, comprising:

• a substrate comprised of SiC;
• a first contact layer arranged parallel to the substrate;
• a p electrode on the first contact layer;
• a second contact layer arranged parallel between the substrate and the first contact layer;
• an n electrode on the second contact layer;
• one or more luminescent layers arranged parallel between the first contact layer and the second contact layer;
• one or more electron gas layers with two-dimensional electron gases that are distributed parallel to the luminescent layers;
• and
• a buffer layer comprised of AlGaN with a molar ratio of AlN in the buffer layer of at least 25%, with the buffer layer coupled to the substrate;
• the one or more electron gas layers are comprised of GaN adjacent the AlGaN buffer layer;
• one of the one or more electron gas layers is coupled to the AlGaN buffer layer to accumulate the two-dimensional electron gas within an interface to the AlGaN buffer layer, with the one or more two-dimensional electron gas layers effectively having no intermixed impurities, enabling the two dimensional electron gases to have extremely high mobility without being scattered by impurities.