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US 7,732,823 B2Granted
Light emitting device and semiconductor device
AssigneeFujitsu Limited
InventorKenichi Kawaguchi
Life of this patent
Estimating the term…
Abstract
In order to make it possible to grow up a light emitting device easily on a substrate made of a Si material system while production of an anti-phase domain can be prevented and a sufficiently high luminous efficiency can be obtained, the light emitting device is configured as a device which includes a substrate (1) formed from a Si material system, a Si1-x-yGexCy (0<x≦1, 0≦y≦0.005) layer (2) and quantum dots (3) made of a direct transition type compound semiconductor. The quantum dots (3) are included in the Si1-x-yGexCy (0<x≦1, 0≦y≦0.005) layer (2) formed on the substrate (1).
Claims8
A light emitting device, comprising:
- a substrate made of a Si material system, a Si1-x-yGexCy(0<x≦1, 0≦y≦0.005) layer, and quantum dots made of a direct transition type compound semiconductor;
- said quantum dots being provided in said Si1-x-yGexCy (0<x≦1, 0≦y≦0.005) layer formed above said substrate.
Dependencies are inferred from the claim text.