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US 7,732,815 B2Granted
Semiconductor thin film, thin film transistor, method of manufacturing the semiconductor thin film, method of manufacturing the thin film transistor, and manufacturing device of semiconductor thin film
AssigneeMitsubishi Electric Corporation
InventorsToru Takeguchi, Shinsuke Yura
Life of this patent
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Abstract
A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.
Claims16
A semiconductor thin film, comprising:
- a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film;
- and
- crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light wherein an average roughness of a surface of the polycrystallized semiconductor thin film is 3 nm or less.
A method of manufacturing a semiconductor thin film, comprising:
- forming an amorphous semiconductor thin film over a substrate;
- and
- irradiating the amorphous semiconductor thin film with laser light to form a polycrystallized semiconductor thin film including crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light wherein an average roughness of a surface of the polycrystallized semiconductor thin film is 3 nm or less.
A manufacturing device of a semiconductor thin film, comprising:
- a laser light emitting device applying laser light to an amorphous semiconductor thin film to arrange crystal grains in a polycrystallized amorphous semiconductor thin film in a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light, the amorphous semiconductor thin film being polycrystallized if applied with the laser light;
- and
- a circular polarizing element circularly polarizing the laser light from the laser light emitting device.
Dependencies are inferred from the claim text.