Liquid crystal display device and method of fabricating the same
AssigneeLG Display Co., Ltd.
InventorsNa-Kyung Lee, Sung-Lim Nam
Life of this patent
Estimating the term…
Abstract
A liquid crystal display (LCD) device includes a gate line and a data line crossing each other to define a pixel region on a first substrate, a thin film transistor connected to the gate line and the data line, a first protrusion and a second protrusion formed on the first substrate, a pixel electrode connected to the thin film transistor in the pixel region, a first patterned spacer and a second patterned spacer formed on a second substrate facing the first substrate, wherein the first patterned spacer corresponds to the first protrusion, and the second patterned spacer corresponds to the second protrusion.
Claims11
A liquid crystal display (LCD) device, comprising:
- a first substrate and a second substrate facing each other and having a liquid crystal layer interposed therebetween;
- a gate line and a data line crossing each other to define a pixel region on the first substrate;
- a thin film transistor connected to the gate and data lines;
- a first protrusion and a second protrusion formed on the first substrate;
- a pixel electrode connected to the thin film transistor in the pixel region;
- and
- a first patterned spacer and a second patterned spacer formed on the second substrate, wherein the first patterned spacer corresponds to the first protrusion and the second patterned spacer corresponds to the second protrusion,
- wherein the first protrusion has a first height and the second protrusion has a second height such that the first height is greater than the second height,
- wherein the first patterned spacer and the second patterned spacer have substantially a same height, such that the first patterned spacer contacts the first protrusion and the second patterned spacer is separated from the second protrusion,
- wherein the thin film transistor includes a gate electrode extending from the gate line, a gate insulating layer on the gate electrode, a semiconductor layer including an active layer and an ohmic contact layer on the gate insulating layer, and source and drain electrodes spaced apart from each other on the semiconductor layer,
- wherein the first protrusion includes a first layer, a second layer and a third layer such that the first layer is formed of a same layer as the active layer, the second layer is formed of a same layer as the ohmic contact layer, and the third layer is formed of a same layer as the source and drain electrodes,
- wherein the gate line has a first portion with a first width corresponding to the first and second protrusions and a second portion with a second width, the first width being greater than the second width, and wherein the second protrusion includes a single layer of a same layer as the active layer.
Dependencies are inferred from the claim text.