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US 7,732,813 B2Granted
Image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorJin Ha Park
Life of this patent
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Abstract
An image sensor and a method of manufacturing the same are provided. A metal wiring layer is formed on a semiconductor substrate including a circuit region, and first conductive layers are formed on the metal layer separated by a pixel isolation layer. An intrinsic layer is formed on the first conductive layers, and a second conductive layer is formed on the intrinsic layer.
Claims14
A method for manufacturing an image sensor, comprising:
- forming a metal wiring layer, comprising an interlayer dielectric layer and a plurality of metal wirings on a semiconductor substrate including a circuit region;
- forming a first semiconductor layer on the metal wiring layer;
- forming first conductive layers separated from each other by implanting a first impurity in the first semiconductor layer;
- wherein the first impurity is implanted at least in the portions of the first semiconductor layer directly over the metal wirings of the plurality of metal wirings;
- forming an intrinsic layer formed on the first conductive layers;
- and
- forming a second conductive layer on the intrinsic layer.
4 more elements
Dependencies are inferred from the claim text.