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US 7,732,805 B2Granted
Image sensor and method for manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorCheon Man Shim
Life of this patent
Estimating the term…
Abstract
An image sensor and a method for manufacturing the same are provided. The image sensor can include transistor circuitry on a substrate, and a photodiode arranged above the transistor circuitry. The photodiode can include carbon nanotubes and a conductive polymer layer on the carbon nanotubes. A transparent conducting electrode can be provided on the carbon nanotubes.
Claims13
An image sensor comprising:
- a substrate including transistor circuitry;
- a lower interconnection on the substrate connected to the transistor circuitry
- a first conductive-type conductive layer on the lower interconnection;
- an intrinsic layer on the first conductive-type conductive layer;
- carbon nanotubes on the intrinsic layer;
- and
- a conductive polymer layer coated on the carbon nanotubes,
- wherein the carbon nanotubes are doped with a second conductive-type material.
5 more elements
An image sensor comprising:
- a substrate including transistor circuitry;
- a lower interconnection on the substrate connected to the transistor circuitry;
- carbon nanotubes on the lower interconnection;
- an intrinsic layer on the carbon nanotubes;
- a second conductive-type conductive layer on the intrinsic layer;
- and
- a conductive polymer layer on the second conductive-type conductive layer,
- wherein the carbon nanotubes are doped with a first conductive-type material.
5 more elements
An image sensor comprising:
- a substrate including transistor circuitry;
- a lower interconnection on the substrate connected to the transistor circuitry;
- carbon nanotubes on the lower interconnection;
- a conductive polymer layer coated on the carbon nanotubes;
- and
- a silicon-based conductive layer contacting the conductive polymer coated carbon nanotubes.
3 more elements
Dependencies are inferred from the claim text.