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US 7,732,804 B2Granted
Solid state charge qubit device
AssigneeQuocor Pty. Ltd.
InventorsLloyd Christopher Leonard Hollenberg, Andrew Steven Dzurak, Cameron Wellard, Alexander Rudolf Hamilton, David J. Reilly, Gerard J. Milburn, Robert Graham Clark
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Abstract
Ionisation of one of a pair of dopant atoms in a substrate creates a double well potential, and a charge qubit is realised by the location of one or more electrons or holes within this potential. The dopant atoms may comprise phosphorous atoms, located in a silicon substrate. A solid state quantum computer may be formed using a plurality of pairs of dopant atoms, corresponding gate electrodes, and read-out devices comprising single electron transistors.
Claims17
A quantum device, comprising:
- an electrically inert solid substrate within which there is;
- a charge qubit comprising a pair of dopant atoms having a net charge and an electric field having two potential wells, wherein the two potential wells are located adjacent respective dopant atoms;
- and wherein a location of the net charge in the electric field having two potential wells defines a logical state of the charge qubit;
- and wherein a first gate is located over a potential barrier between the two potential wells to control a barrier height;
- and
- at least one second gate is located to control relative shapes and sizes of the two potential wells, wherein the substrate is silicon, the dopant atoms are phosphorus (P) atoms and the charge qubit is a P —P+ system, whose electric field has the two potential wells.
3 more elements
Dependencies are inferred from the claim text.