Light emitting device having stacked multiple LEDS
AssigneeBridgelux, Inc.
InventorsFrank Shum, Heng Liu
Life of this patent
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Abstract
A light emitting device and method of producing the same is disclosed. The light emitting device includes a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another.
Claims30
A light emitting device, comprising:
- a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another, each of the LEDs comprising a p-type semiconductor layer, an n-type semiconductor layer, and an active layer between and in contact with the p-type semiconductor layer and the n-type semiconductor layer,
- wherein the LEDs are stacked without an intervening substrate layer.
A method for producing a light emitting device, comprising:
- forming a plurality of light emitting diodes (LEDs), each of the LEDs comprising a p-type semiconductor layer, an n-type semiconductor layer, an active layer between and in contact with the p-type semiconductor layer and the n-type semiconductor layer, and a substrate layer in contact with one of the p-type semiconductor layer or the n-type semiconductor layer;
- removing at least one substrate layer of at least one of the LEDs;
- and
- stacking the LEDs one on top of another without an intervening substrate layer between each of the LEDs, the LEDs being stacked so as to form a layered structure.
A method for producing light from a light emitting device having a plurality of light emitting diodes (LEDs), wherein the plurality of LEDs are stacked one on top of another so as to form a layered structure, and wherein each of the LEDs includes a n- type semiconductor layer and a p-type semiconductor layer, the method comprising:
- applying a first voltage to one of the p-type semiconductor layer or the n-type semiconductor layer of a first LED of the LEDs through a common electrode coupled between the first LED and a second LED of the LEDs;
- and
- applying the first voltage to one of the p-type semiconductor layer or the n-type semiconductor layer of the second LED through the common electrode.
A stacked light emitting device (LED), comprising:
- a first LED comprising a p-type layer, an n-type layer, and an active layer between and contacting with the p-type layer and the n-type layer;
- a second LED comprising a p-type layer, an n-type layer, and an active layer between and contacting with the p-type layer and the n-type layer;
- and
- an ohmic contact layer between and contacting with one of the p-type layer or the n-type layer of the first LED and one of the p-type layer or the n-type layer of the second LED.
A method for producing a light emitting device (LED), comprising:
- forming a first LED with a first LED p-type layer, a first LED n-type layer, an active layer between and contacting with the first LED p-type layer and the first LED n-type layer, and a first LED substrate layer contacting the first LED n-type layer;
- forming a second LED with a second LED p-type layer, a second LED n-type layer, an active layer between and contacting with the second LED p-type layer and the second LED n-type layer, and a second LED substrate layer contacting the second LED n-type layer;
- forming an ohmic contact layer on the first LED p-type layer;
- removing the second LED substrate layer;
- and
- stacking the second LED onto the first LED with the second LED n-type layer contacting the ohmic contact layer.
Dependencies are inferred from the claim text.