Semiconductor light emitting device
AssigneeLG Innotek Co., Ltd.
InventorsBum Chul Cho, Seung Hyun Yang
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Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate comprising a reflective pattern with a valley, a first nitride semiconductor layer on the substrate, an air gap formed between the reflective pattern and the first nitride semiconductor layer, an active layer on the first nitride semiconductor layer, and a second nitride semiconductor layer on the active layer.
Claims20
A semiconductor light emitting device comprising:
- a substrate comprising a plurality of discrete and separated protruding reflective patterns protruding from the substrate and including a valley;
- a first nitride semiconductor layer on the substrate and covering the reflective patterns;
- an air gap formed in the valley of a corresponding reflective pattern between the substrate and the first nitride semiconductor layer;
- an active layer on the first nitride semiconductor layer;
- and
- a second nitride semiconductor layer on the active layer.
A semiconductor light emitting device comprising:
- a substrate comprising a reflective pattern with a valley;
- a first nitride semiconductor layer on the substrate;
- an air gap formed between the reflective pattern and the first nitride semiconductor layer;
- an active layer on the first nitride semiconductor layer;
- and
- a second nitride semiconductor layer on the active layer,
- wherein the air gap comprises a diameter equal to or smaller than 2 um and a depth equal to or more than in a range of 1.5 um to 2 um.
A semiconductor light emitting device comprising:
- a substrate including a plurality of valleys directly formed in a surface of the substrate;
- a first nitride semiconductor layer on the substrate;
- an air gap formed in valleys between the substrate and the first nitride semiconductor layer;
- an active layer on the first nitride semiconductor layer;
- and
- a second nitride semiconductor layer on the active layer.
A semiconductor light emitting device comprising:
- a substrate comprising a valley;
- a first nitride semiconductor layer on the substrate;
- an air gap formed in the valley between the substrate and the first nitride semiconductor layer;
- an active layer on the first nitride semiconductor layer;
- and
- a second nitride semiconductor layer on the active layer,
- wherein the air gap comprises a diameter equal to or smaller than 2 um and a depth in a range of 1.5 um to 2 um.
Dependencies are inferred from the claim text.