Resistor random access memory cell with L-shaped electrode
AssigneeMacronix International Co., Ltd.
InventorsErh Kun Lai, Chia Hua Ho, Kuang Yeu Hsieh
Life of this patent
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Abstract
A phase change random access memory PCRAM device is described suitable for use in large-scale integrated circuits. An exemplary memory device has a pipe-shaped first electrode formed from a first electrode layer on a sidewall of a sidewall support structure. A sidewall spacer insulating member is formed from a first oxide layer and a second, “L-shaped,” electrode is formed on the insulating member. An electrical contact is connected to the horizontal portion of the second electrode. A bridge of memory material extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall spacer insulating member.
Claims23
A memory device, comprising:
- a sidewall support structure having a sidewall;
- a first electrode having a first electrode length comprising a portion of a first electrode layer disposed on the sidewall of the sidewall support structure;
- a sidewall spacer insulating member having a sidewall spacer insulating member length comprising a portion of a first sidewall spacer layer disposed on the first electrode;
- a second electrode having a second electrode length comprising a portion of a second electrode layer disposed on the first sidewall spacer layer, and having a horizontal portion extending away from the first electrode;
- a bridge having a bridge width, the bridge extending from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall spacer insulating member, wherein the bridge comprises memory material;
- and
- a conductor connected to the horizontal portion of the second electrode, and extending vertically to a layer above the bridge.
Dependencies are inferred from the claim text.