Programmable via structure for three dimensional integration technology
AssigneeInternational Business Machines Corporation
InventorsBruce G. Elmegreen, Lia Krusin-Elbaum, Chung Hon Lam, Dennis M. Newns, Matthew R. Wordeman, Albert M. Young
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Abstract
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
Claims9
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices, comprising:
- a via filled at least in part with a phase change material (PCM);
- a heating device proximate said PCM, said heating device configured to switch the conductivity of a transformable portion of said PCM between a lower resistance crystalline state and a higher resistance amorphous state;
- said via thereby defining a programmable link between an input connection located at one end thereof and an output connection located at another end thereof;
- wherein said input connection of said programmable link is formed on a first metal level, input and output terminals for said heating device are located on a second metal level, and said output connection of said programmable link is formed on a third metal level;
- said via filled at least in part with said PCM is disposed between said input connection of said programmable link and a top side of said heating device, another via is disposed between a bottom surface of said heating device and said output connection of said programmable link;
- and
- wherein said another via is disposed directly beneath said via filled at least in part with said PCM, and said another via is also filled at least in part with said PCM.
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices, comprising:
- a via filled at least in part with a phase change material (PCM);
- a heating device proximate said PCM, said heating device configured to switch the conductivity of a transformable portion of said PCM between a lower resistance crystalline state and a higher resistance amorphous state;
- said via thereby defining a programmable link between an input connection located at one end thereof and an output connection located at another end thereof, wherein said input connection of said programmable link is formed on a first metal level input and output terminals for said heating device are located on a second metal level, and said output connection of said programmable link is formed on a third metal level;
- said via filled at least in part with said PCM is disposed between said input connection of said programmable link and said output connection of said programmable link;
- and
- said via filled at least in part with said PCM passes through said heating device.
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices, comprising:
- a via filled at least in part with a phase change material (PCM);
- a heating device proximate said PCM, said heating device configured to switch the conductivity of a transformable portion of said PCM between a lower resistance crystalline state and a higher resistance amorphous state;
- said via thereby defining a programmable link between an input connection located at one end thereof and an output connection located at another end thereof, wherein said input and output connections of said programmable link are formed on the same metal level with respect to one another, and wherein input and output terminals for said heating device are located on a different metal level with respect to said input and output connections of said programmable link;
- said via filled at least in part with said PCM is disposed between said input connection of said programmable link and a top side of said heating device;
- and
- another via disposed between said top surface of said heating device and said output connection of said programmable link, and said another via also filled at least in part with said PCM.
Dependencies are inferred from the claim text.