Multi-plasma neutral beam source and method of operating
AssigneeTokyo Electron Limited
InventorsLee Chen, Merritt Funk
Life of this patent
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Abstract
Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises an electron acceleration member configured to accelerate the electrons from the first plasma region into the second plasma region. Further yet, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.
Claims25
A processing system configured to treat a substrate, comprising:
- a neutral beam source comprising:
- a beam chamber comprising a first plasma region configured to receive a first process gas at a first pressure and a second plasma region disposed downstream of said first plasma region and configured to receive said first process gas from said first plasma region at a second pressure,
- a first gas injection system coupled to said beam chamber and configured to introduce said first process gas to said first plasma region,
- a plasma generation system coupled to said beam chamber and configured to generate a first plasma in said first plasma region from said first process gas,
- a separation member disposed between said first plasma region and said second plasma region, wherein said separation member comprises one or more openings configured to allow transport of electrons from said first plasma region to said second plasma region,
- an electron acceleration member disposed between said first plasma region and said second plasma region,
- a plasma heating system coupled to said beam chamber and configured to heat said electrons in said second plasma region to form a second plasma, and
- a neutralizer grid coupled to an outlet of said neutral beam source and configured to neutralize a flow of ions from said second plasma through said neutralizer grid in order to form said neutral beam;
- a process chamber coupled to said neutral beam source and configured to receive said neutral beam in a processing space, wherein said process chamber comprises a substrate holder configured to support said substrate and position said substrate for treatment by said neutral beam;
- and
- a vacuum pumping system coupled to said process chamber and configured to pump said processing space in said process chamber, and coupled to said neutral beam source and configured to pump said first plasma region or said second plasma region or both in a neutral beam source.
A neutral beam source configured to be coupled with a process chamber for treating a substrate, comprising:
- a beam chamber comprising a first plasma region configured to receive a first process gas at a first pressure and a second plasma region disposed downstream of said first plasma region and configured to receive said first process gas from said first plasma region at a second pressure;
- a first gas injection system coupled to said beam chamber and configured to introduce said first process gas to said first plasma region;
- a plasma generation system coupled to said beam chamber and configured to generate a first plasma in said first plasma region from said first process gas;
- a separation member disposed between said first plasma region and said second plasma region, wherein said separation member comprises one or more openings configured to allow transport of electrons and said first process gas from said first plasma region to said second plasma region;
- an electron acceleration member disposed between said first plasma region and said second plasma region;
- a plasma heating system coupled to said beam chamber and configured to heat said electrons in said second plasma region to form a second plasma;
- and
- a neutralizer grid coupled to an outlet of said neutral beam source and configured to neutralize a flow of ions from said second plasma through said neutralizer grid in order to form a neutral beam.
A method for treating a substrate with a neutral beam, comprising:
- disposing said substrate in a processing chamber configured to treat said substrate with said neutral beam;
- forming said neutral beam using a neutral beam source coupled to said processing chamber, wherein said forming comprises creating a first plasma in a first plasma region, transporting electrons from said first plasma in said first plasma region to a second plasma region, accelerating said electrons from said first plasma region to said second plasma region using an electric field, heating said electrons in said second plasma region, and neutralizing ions from said second plasma region;
- pumping said neutral beam source using a vacuum pumping system coupled to said neutral beam source;
- pumping said processing chamber using said vacuum pumping system coupled to said processing chamber;
- and
- exposing said substrate to said neutral beam.
Dependencies are inferred from the claim text.