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US 7,732,728 B2Granted
Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
AssigneeLam Research Corporation
InventorsRajinder Dhindsa, Eric H. Lenz, Andy W. DeSepte, Lumin Li
Life of this patent
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Abstract
A plasma processing chamber includes a cantilever assembly configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.
Claims13
A plasma processing apparatus, comprising:
- a chamber comprising a wall separating the interior of the chamber into first and second regions, the wall having an opening therein providing fluid communication between the first and second regions;
- a cantilever assembly comprising an arm unit extending horizontally through the opening such that a first end is in the first region and a second end is in the second region, a substrate support being located on an upper portion of the first end and a service conduit being located at the second end;
- an actuation mechanism coupled to an upper portion of the service conduit and operative to move the cantilever assembly in a vertical direction;
- and a dual bellows arrangement providing a balanced atmospheric load on the interior of the chamber, the dual bellows including a first bellows providing a vacuum seal between an upper part of the chamber and the upper portion of the service conduit and a second bellows providing a vacuum seal between a lower part of the chamber and a lower portion of the service conduit.
1 more element
Dependencies are inferred from the claim text.