Dielectric porcelain composition for use in electronic devices

Abstract

The invention intends to provide a dielectric porcelain composition for use in electronic devices which can be controlled in the temperature coefficient τf in particular in a negative direction and can shorten a sintering period while maintaining a high Qf value and a high dielectric constant. According to the invention, in conventional composition having a composition formula represented by XBa(Mg1/3Ta2/3)O3—Y(BazSr1-z)(Ga1/2Ta1/2)O3, when Mg is substituted by Ni to form a specific structure, the temperature coefficient τf can be controlled in a negative direction and the τf can be controlled in the range of 0.80 to −4.45 ppm/° C. while maintaining a high Qf value and a high dielectric constant, and even when a sintering period, which has been so far necessary substantially 50 hr, is reduced to 25 hr substantially one half the above, similar Qf value can be obtained.

Dependencies are inferred from the claim text.