Manufacturing method of semiconductor device and laser processing apparatus
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHirotada Oishi, Koichiro Tanaka
Life of this patent
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Abstract
In a manufacturing process of a semiconductor device, a manufacturing technique and a manufacturing apparatus of a semiconductor device which simplify a lithography step using a photoresist is provided, so that the manufacturing cost is reduced, and the throughput is improved. An irradiated object, in which a light absorbing layer and an insulating layer are stacked over a substrate, is irradiated with a multi-mode laser beam and a single-mode laser beam so that both the laser beams overlap with each other, and an opening is formed by ablation in part of the irradiated object the irradiation of which is performed so that both the laser beams overlap with each other.
Claims18
A method for manufacturing a semiconductor device comprising the steps of:
- forming a light absorption layer;
- forming an insulating layer over the light absorption layer;
- and
- irradiating the insulating layer with a multi-mode laser beam and a single-mode laser beam simultaneously so that those laser beams overlap with each other and forming an opening in a region of the insulating layer where those laser beams overlap.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a light absorption layer;
- forming an insulating layer over the light absorption layer;
- and
- irradiating the insulating layer and the light absorption layer with a multi-mode laser beam and a single-mode laser beam simultaneously so that those laser beams overlap with each other and forming an opening in a region of the insulating layer and the light absorption layer where those laser beams overlap.
Dependencies are inferred from the claim text.