Manufacturing method of insulating film and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorHiroko Yamamoto
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Abstract
The invention provides a manufacturing method of an insulating film having a plurality of pores, as well as a manufacturing method of a highly integrated semiconductor device with high yield. According to the invention, a porous insulating film is formed by forming a plurality of pores in an interlayer insulating film using a laser beam, which results in lower dielectric constant of the interlayer insulating film. In addition, a composition containing conductive particles is discharged onto the porous insulating film by a droplet discharge method typified by an ink jet printing method, and then baked to form a wire. As the laser beam, an ultrashort pulse laser beam is preferably used.
Claims19
A manufacturing method of an insulating film, comprising the steps of:
- forming a first insulating film over a substrate by using one of CVD, plasma CVD, and sputtering method;
- and
- selectively irradiating the first insulating film with a laser beam condensed by an optical lens to form a pore in the vicinity of a condensed spot,
- wherein a porous insulating film is formed by moving the condensed spot.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a first conductive film over a substrate;
- forming a first insulating film covering the first conductive film;
- selectively irradiating the first insulating film with a first laser beam to form a plurality of pores, whereby a porous insulating film is formed;
- etching a part of the porous insulating film, whereby the first conductive film is exposed and a contact hole is formed;
- discharging a liquid substance containing conductive particles into the contact hole by a droplet discharge method;
- and
- irradiating a part of the liquid substance containing the conductive particles with a second laser beam, whereby a second conductive film constituted by the conductive particles is formed.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a first conductive film over a substrate;
- forming a first insulating film covering the first conductive film;
- etching a part of the first insulating film, whereby the first conductive film is exposed and a contact hole is formed;
- selectively irradiating the first insulating film with a first laser beam to form a plurality of pores, whereby a porous insulating film is formed;
- discharging a liquid substance containing conductive particles into the contact hole by a droplet discharge method;
- and
- irradiating a part of the liquid substance containing the conductive particles with a second laser beam, whereby a second conductive film constituted by the conductive particles is formed.
Dependencies are inferred from the claim text.