Method of producing a porous dielectric element and corresponding dielectric element
AssigneeSTMicroelectronics S.r.l.
InventorsSimon Jeannot, Laurent Favennec
Life of this patent
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Abstract
A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improves the overall dielectric constant of the resulting dielectric element.
Claims13
A method of producing a porous dielectric element, comprising:
- forming of at least a first dielectric and at least a second dielectric which is dispersed in the first dielectric, wherein the first dielectric is a dielectric formed by SixCyHz;
- and
- removing of the second dielectric by a chemical dissolution.
A method of producing a porous dielectric element, comprising:
- forming of at least a first dielectric and at least a second dielectric which is dispersed in the first dielectric;
- and
- removing of the second dielectric by a chemical dissolution;
- wherein forming comprises performing plasma-enhanced chemical vapor deposition using a first-type organosilicon precursor for forming the first dielectric and using a second-type organosilicon precursor for forming the second dielectric, wherein the second dielectric is uniformly dispersed within the first dielectric;
- and
- wherein the first-type organosilicon precursor is of SixCyHz type and the second-type organosilicon precursor is of SiwOxCyHz type.
A method of producing a porous dielectric element, comprising:
- forming of at least a first dielectric and at least a second dielectric which is dispersed in the first dielectric;
- and
- removing of the second dielectric by a chemical dissolution;
- wherein forming comprises performing spin-on deposition of the first dielectric mixed with molecules which comprise the second dielectric;
- wherein the first dielectric is SiLK material and the second dielectric comprises siloxane molecules;
- and
- wherein the SiLK material does not contain any silicon atoms and the siloxane is of the decamethylcyclopentasiloxane type.
Dependencies are inferred from the claim text.