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US 7,732,346 B2Granted
Wet cleaning process and method for fabricating semiconductor device using the same
AssigneeUnited Mircoelectronics Corp.
InventorsChien-En Hsu, Chih-Nan Liang, Po-Sheng Lee
Life of this patent
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Abstract
A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO2, and then draining the water containing CO2 to expose the substrate in an atmosphere of CO2. The second rinse step includes rinsing the substrate using deionized water containing CO2.
Claims20
A wet cleaning process, comprising:
- performing at least one first rinse process, the first rinse process comprising:
- rinsing a substrate using deionized water in a rinsing tank and concurrently supplying CO2 to the rinsing tank, wherein the deionized water and the CO2 are constantly introduced into the rinsing tank and, at the same time, the deionized water is allowed to overflow the rinsing tank, and for submerging the substrate therein;
- and
- draining the deionized water used for the rinsing and the submerging of the substrate in the previous rinsing step while maintaining the supply of the CO2 to the rinsing tank to expose the substrate in an atmosphere of CO2, wherein the deionized water is not being introduced into the tank during the step of draining the deionized water.
1 more element
A method for fabricating a semiconductor device, comprising:
- providing a substrate having a metal layer thereon;
- forming a photoresist layer above the metal layer;
- performing an etching process with the photoresist layer as an etching mask in order to etch the metal layer;
- removing the photoresist layer using an organic solution or an alkaline solution;
- and
- performing at least one first rinse process, comprising:
- rinsing a substrate using deionized water containing CO2 in a rinsing tank and concurrently supplying CO2 to the rinsing tank, wherein the deionized water and the CO2 are constantly introduced into the rinsing tank and, at the same time, the deionized water is allowed to overflow the rinsing tank, and for submerging the substrate therein;
- and
- draining the deionized water used for the rinsing and the submerging of the substrate in the previous rinsing step while maintaining the supply of the CO2 to the rinsing tank to expose the substrate in an atmosphere of CO2, wherein the deionized water is not being introduced into the tank during the step of draining the deionized water.
6 more elements
Dependencies are inferred from the claim text.