Shallow trench isolation process and structure with minimized strained silicon consumption

A method of producing an integrated circuit, comprising:

• providing a buried oxide (BOX) layer;
• providing a compound semiconductor layer above the BOX layer;
• providing a strained semiconductor layer above the compound semiconductor layer;
• selectively etching trenches in the compound semiconductor layer;
• and
• providing isolation material in the trenches etched in the compound semiconductor layer, wherein the trenches include sidewalls, the sidewalls of the trenches being at least partially covered by the strained semiconductor layer;
• wherein the strained semiconductor material is silicon and the compound semiconductor material is silicon-germanium and the trenches extend from the strained semiconductor material at a top to the BOX layer at a bottom.