Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising the steps of:

• forming a first film over a substrate on a surface, wherein a wettability of the first film is lower than the surface;
• applying a solution containing a mask material to the first film thereby forming a mask over the first film by using an ink-jet method;
• etching selectively the first film with the use of the mask thereby forming at least two low wettability regions and a high wettability region over the surface, wherein the high wettability region is provided between the two low wettability regions;
• removing the mask;
• applying a solution containing a conductive material of a gate electrode selectively over the surface to form the gate electrode by using the ink-jet method after removing the mask, and
• forming a gate insulating film over the gate electrode,
• wherein contact angle of the solution containing the mask material on the first film is smaller than contact angle of the solution containing the material on the first film,
• wherein a top surface of the high wettability region is lower than top surfaces of the two low wettability regions.

A method for manufacturing a semiconductor device, comprising the steps of:

• applying a solution containing a conductive material of a gate electrode over a substrate to form the gate electrode selectively by using an ink-jet method;
• forming a gate insulating film over the gate electrode;
• forming a first semiconductor film over the gate insulating film;
• forming a second semiconductor film having one conductivity over the first semiconductor film;
• forming a patterned first film over the second semiconductor film by selective etching, wherein a wettability of the patterned first film is lower than the second semiconductor film, to form at least two low wettability regions and a high wettability region over the second semiconductor film;
• applying a solution containing a mask material selectively over the second semiconductor film to form a mask over the second semiconductor film by using the ink-jet method;
• etching the patterned first film, the first semiconductor film and the second semiconductor film with the use of the mask, and
• forming a source and a drain electrode over the second semiconductor film,
• wherein the high wettability region is provided between the two low wettability regions, and
• wherein a top surface of the high wettability region is lower than top surfaces of the two low wettability regions.