Vapor deposition of tungsten materials

A method for forming a tungsten-containing material on a substrate, comprising:

• positioning a substrate within a processing chamber;
• depositing a tungsten silicide layer on the substrate during a vapor deposition process, comprising:
• exposing the substrate to a continuous flow of a silicon precursor gas;
• and
• exposing the substrate to intermittent pulses of a tungsten precursor gas while flowing the silicon precursor gas and depositing the tungsten silicide layer, wherein the silicon precursor gas and the tungsten precursor gas are exposed to the substrate having a silicon/tungsten precursor flow rate ratio of about 2 or greater;
• depositing a tungsten nitride layer on the tungsten silicide layer;
• and
• depositing a tungsten material over the tungsten nitride layer.

A method for forming a tungsten-containing material on a substrate, comprising:

• positioning a substrate within a processing chamber;
• depositing a tungsten silicide layer on the substrate during a vapor deposition process, comprising:
• exposing the substrate to a continuous flow of a silicon precursor gas;
• exposing the substrate to intermittent pulses of a tungsten precursor gas while flowing the silicon precursor gas and depositing the tungsten silicide layer, wherein the silicon precursor gas and the tungsten precursor gas are exposed to the substrate having a silicon/tungsten precursor flow rate ratio of about 2 or greater;
• depositing a tungsten nitride layer on the tungsten silicide layer during an atomic layer deposition process;
• depositing a tungsten nucleation layer over the tungsten nitride layer during an atomic layer deposition process, wherein the substrate is exposed to a pre-soak gas comprising a reducing agent during a presoak process prior to depositing the tungsten nucleation layer or the substrate is exposed to a post-soak gas comprising the reducing agent during a post-soak process subsequent to depositing the tungsten nucleation layer;
• and
• depositing a tungsten bulk layer over the tungsten nucleation layer.