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US 7,732,316 B2Granted
Method for manufacturing a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorChi Hwan Jang
Life of this patent
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Abstract
In accordance with an embodiment of the invention the method of manufacturing a semiconductor device is capable of forming a semiconductor substrate having an embossing structure. The method includes forming a layer having a plurality of hemispherical single crystal silicon elements, and forming one or more carbon nano tubes between adjacent hemispherical single crystal silicon elements, thereby, increasing a length of an effective channel of a transistor.
Claims16
A manufacturing method of a semiconductor device, the method comprising:
- forming a layer comprising a plurality of hemispherical single crystal silicon elements over a semiconductor substrate;
- forming one or more carbon nano tubes between adjacent hemispherical single crystal silicon elements;
- forming a gate insulating layer over the hemispherical single crystal silicon elements, the semiconductor substrate, and the carbon nano tubes;
- and
- forming a gate material layer over the gate insulating layer.
2 more elements
Dependencies are inferred from the claim text.